DMN63D8LDW-7
Manufacturer:
Diodes Incorporated
Mfr.Part #:
DMN63D8LDW-7
Datasheet:
Description:
MOSFETs SOT-363 SMD/SMT N-Channel number of channels:2 300 mW 30 V Continuous Drain Current (ID):220 mA 870 pC
| Parameter | Value |
|---|---|
| Length | 2.2 mm |
| Width | 1.35 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 6 |
| Height | 1 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Weight | 6.010099 mg |
| Contact Plating | Tin |
| Number of Elements | 2 |
| Max Power Dissipation | 300 mW |
| Power Dissipation | 300 mW |
| Threshold Voltage | 1.5 V |
| Number of Channels | 2 |
| Input capacitance | 22 pF |
| Continuous Drain Current (ID) | 220 mA |
| Rds On Max | 2.8 Ω |
| Drain to Source Voltage (Vdss) | 30 V |
| Turn-On Delay Time | 3.3 ns |
| Turn-Off Delay Time | 12 ns |
| Element Configuration | Dual |
| Rise Time | 3.2 ns |
| Gate Charge | 870 pC |
| Drain to Source Resistance | 2.8 Ω |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| Schedule B | 8541210080 |
| Gate to Source Threshold Voltage | 800 mV |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 408
Distributors
pcbx
pcbxUnit Price$0.09964
Ext.Price$0.09964
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.09964 | $0.09964 |
| 10 | $0.04982 | $0.49820 |
| 50 | $0.04537 | $2.26850 |
| 100 | $0.04132 | $4.13200 |
| 500 | $0.03701 | $18.50500 |
| 1000 | $0.03315 | $33.15000 |
| 3000 | $0.02969 | $89.07000 |
| 5000 | $0.02568 | $128.40000 |